Authored By:
Victor Vilar, Elan Herrera, Chris Nichols, Charles Woychik
SkyWater Technology, Inc.
FL, USA
Summary
Advanced wafer level packaging has been evolving with the need to scale down to sub-10um pitches due to limitations with current solder bumping techniques. Hybrid bonding technology facilitates the interconnection of tightly spaced metal pads in a 3D vertical stack configuration. The advantages of this packaging technique enable sub-10um pitch designs, increases the I/O density, expands device bandwidth, decreases power needs, improves device speed, etc.
The focus of this paper is to discuss methodologies that ensure high yielding Cu-based wafer to wafer (W2W) hybrid bonding that include but not limited to description of the test vehicle used, chemical mechanical planarization, metrology, plasma activation, bonding techniques, annealing, CSAM feedback and cross sections to verify metal to metal pad diffusion.
Conclusions
This effort has shown that both oxide and hybrid bonding can be successfully achieved using a 200mm wafer format once CMP and Bonding is optimized, and the appropriate metrology tools are available for this specific type of advanced packaging development.
Initially Published in the SMTA Proceedings
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